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MITSUBISHI Nch POWER MOSFET
FS100VSJ-03
HIGH-SPEED SWITCHING USE
FS100VSJ-03
OUTLINE DRAWING
1.5MAX.
Dimensions in mm
4.5 1.3
r
10.5MAX.
1.5MAX. 8.6 0.3 9.8 0.5
3.0 +0.3 -0.5
0 -0
+0.3
1 5 0.8
B
0.5
qwe wr
2.6 0.4
4V DRIVE VDSS ................................................................................. 30V rDS (ON) (MAX) ............................................................ 4.7m ID ...................................................................................... 100A Integrated Fast Recovery Diode (TYP.) .......... 100ns
q
q GATE w DRAIN e SOURCE r DRAIN e
TO-220S
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 30 20 100 400 100 100 400 125 -55 ~ +150 -55 ~ +150 1.2
4.5
Unit V V A A A A A W C C g
Feb.1999
L = 30H
(1.5)
MITSUBISHI Nch POWER MOSFET
FS100VSJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 50A, VGS = 10V ID = 50A, VGS = 4V ID = 50A, VGS = 10V ID = 50A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 30 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 1.5 3.5 4.7 0.175 80 8000 2250 1300 55 190 800 470 1.0 -- 100 Max. -- 0.1 0.1 2.0 4.7 8.0 0.235 -- -- -- -- -- -- -- -- 1.5 1.00 --
Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns
Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 15V, ID = 50A, VGS = 10V, RGEN = RGS = 50
IS = 50A, VGS = 0V Channel to case IS = 50A, dis/dt = -50A/s
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 200 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5
tw = 10ms 100ms 1ms 10ms DC TC = 25C Single Pulse
160
120
80
40
0
0
50
100
150
200
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL)
CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 100
VGS = 10V 80 6V 3V 5V 4V TC = 25C Pulse Test
50
VGS = 10V 6V 40 5V 4V 3V
DRAIN CURRENT ID (A)
60
DRAIN CURRENT ID (A)
30
40
2V
20
2V
20
10
TC = 25C Pulse Test
0
0
0.2
0.4
0.6
0.8
1.0
0
0
0.1
0.2
0.3
0.4
0.5
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS100VSJ-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.0
TC = 25C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 10
TC = 25C Pulse Test
0.8
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m)
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
8
VGS = 4V
0.6
ID = 100A
6
0.4
70A 50A
4
10V
0.2
2 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN CURRENT ID (A)
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 100
TC = 25C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2
TC = 25C 75C 125C
DRAIN CURRENT ID (A)
60
40
20
FORWARD TRANSFER ADMITTANCE yfs (S)
80
0
0
2
4
6
8
10
100 0 10
VDS = 10V Pulse Test
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 105 7 5 3 2
Tch = 25C f = 1MHZ VGS = 0V
SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 101 0 10
td(off) tf Tch = 25C VDD = 15V VGS = 10V RGEN = RGS = 50
104 7 5 3 2 103 7 5 3 2
Ciss
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
Coss Crss
tr td(on)
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS100VSJ-03
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100
VGS = 0V Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
10
Tch = 25C ID = 100A
8
SOURCE CURRENT IS (A)
75
6
50
TC = 125C 75C 25C
4
VDS = 15V 20V 25V
2
25
0
0
40
80
120
160
200
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10-1 -50 0 50 100 150 4.0
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
3.2
2.4
1.6
0.8
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 0.5 5 3 0.2 2 0.1 10-1 7 5 3 2
0.05 0.02 0.01 Single Pulse D = 1.0
1.2
1.0
0.8
PDM
tw T D= tw T
0.6
0.4
-50
0
50
100
150
10-2 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s)
Feb.1999
CHANNEL TEMPERATURE Tch (C)

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